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Annealing furnace for silicon wafer film preparation

Min.Order Quantity: 1 Set/Sets Annealing furnace for silicon wafer film preparation

Supply Ability: 2 Set/Sets per Month Annealing furnace for silicon wafer film preparation

Payment Terms: L/C,T/T,


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The annealing furnace for preparing silicon wafer film is characterized by: the main body is a chamber, and also includes a valve distribution device. The chamber comprises a furnace door, a quartz cavity and a quartz bracket. The furnace door is located on the quartz cavity, the quartz bracket is connected with the furnace door, and the quartz bracket is located in the quartz cavity, and the quartz plate uniform flow plate is also arranged on the quartz bracket. A number of holes are distributed on the uniform flow plate of the quartz plate. The gas distribution device comprises an intake air path, an exhaust gas path and a tail gas treatment gas path, which are connected with the furnace gate, and the exhaust gas path and the tail gas treatment gas path are respectively connected with the outlet end of the quartz cavity body. The intake gas path includes an argon gas path, a nitrogen gas path, an oxygen gas path, a hydrogen gas path and chlorination. The argon gas pipeline comprises an argon cylinder, a first pressure regulating valve, a first filter and a first mass flow controller connected sequentially through the pipeline. The nitrogen gas pipeline comprises a nitrogen cylinder, a second pressure regulating valve, a second filter and a second mass flow controller connected sequentially through the pipeline. The oxygen gas pipeline comprises an oxygen cylinder and a third pressure regulating valve connected sequentially through the pipeline. A third filter and a third mass flow controller comprising a hydrogen cylinder, a fourth pressure regulating valve, a fourth filter and a fourth mass flow controller connected sequentially through a pipeline. The hydrogen chloride gas pipeline comprises a hydrogen chloride cylinder, a fifth pressure regulating valve, a fifth filter and a fifth mass flow controller connected sequentially through a pipeline. The exhaust gas pipeline comprises a hydrogen cylinder connected sequentially through a pipeline. A sixth pressure regulating valve and a vacuum pump connected by a circuit are connected, and the sixth pressure regulating valve is connected with the outlet end of the quartz cavity.

Index item

Index value

Effective Inner Diameter of Reaction Tube

290-320 mm (suitable for 125 mm, 156 mm)

Throughput

More than 1200 tablets/batches/tubes

heating temperature

RT~1250℃

Working temperature range

400~1100℃

Temperature control mode

5-stage temperature control and high precision dual-mode control

Length and Accuracy of Constant Temperature Zone

≤±0.5℃/1500mm(800~1100℃),

≤±1℃/1500mm(400~800℃)

temperature stability

≤±0.5℃/4h.(880℃)

Temperature skewing ability

Automatic Controllable Heating Rate: > 20 C/min, Maximum Cooling Rate 6 C/min

Cooling mode

Compound Water Cooling + Air Cooling

Loading Platform and Purification

Automatic Soft Landing, Vertical Laminar Flow, 100 Level (1000 Level Workshop)

Boat delivery mode

SiC Cantilever Propeller Automatic Horizontal Shipping, Stepless Speed Regulation

Gas control mode

MFC Precise Control

Pressure control mode

Closed-loop automation

System Limit Vacuum Degree

10mbar

Process Pressure Range

100~400mbar

Vacuum recovery time

AP→100mbar<10min

System Leakage Rate

<2mbar/min

Treatment of tail gas

Concentrated tail collection, directional discharge after condensate gas-liquid separation

Alarm protection function

Comprehensive alarm chain protection for overtemperature, couple breakage, short circuit, water shutdown, gas shutdown, misoperation, etc.

Process control mode

Fully automatic, PLC + industrial computer, touch screen operation

Charging way

Automatically boarding and disembarking

Interface with automatic loader and unloader

Have (optional)

MES system

Have (optional)


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